N-Channel Enhancement Mode Field Effect Transistor

General Description SRFET TM AO4716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R S(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4716

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AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

INTENSI-FI® XLR 2 × 2 IEEE 802.11N 2.4-GHZ 5-GHZ ROUTER SOC

• High-performance low-cost Draft-802.11n compliant Systemon- a-Chip (SoC) CPU/MAC/baseband/radio wireless router solution • Optimized Intensi-fi® XLR platform with Accelerange™ Technology—a unique set of hardware and software enhancements that ensure more robust wireless coverage in the far

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BOARDCOM

博通

SILICON EPITAXIAL PLANAR ZENER DIODES

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SEMTECH_ELEC

先之科半导体

ZENER DIODE CHIPS

• ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N4678 THRU 1N4717 • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • 50µA, LOW OPERATING CURRENT, ZENER DIODES • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEP

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CDI-DIODE