Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4800B/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. Standard Product AO4800B/L is Pb-free (meets ROHS & Sony 25

文件：114.37 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V Dual N-Channel MOSFET

General Description The AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. Product Summary VDS 30V ID (at V

文件：574.56 Kbytes 页数：6 Pages

AOSMD

万国半导体

Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 6.9 A (VGS = 10V) ● RDS(ON)

文件：2.09007 Mbytes 页数：5 Pages

KEXIN

科信电子

Plastic Encapsulated Device

文件：76.24 Kbytes 页数：5 Pages

AOSMD

万国半导体