N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4702 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky Diode is packaged in parallel to improve device performance in synchronous recitification applications, or H-bridge configurations. Standard Product AO4702 is Pb-free (meets

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AOSMD

万国半导体

SILICON EPITAXIAL PLANAR ZENER DIODES

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SEMTECH_ELEC

先之科半导体

2500 WATTS (AC) DC/D CSINGLE OUTPUT

Features • Single Output • 6U x 28TE x 306mm • Weight 9.0kg

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POWERBOX

ZENER DIODE CHIPS

• ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N4678 THRU 1N4717 • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • 50µA, LOW OPERATING CURRENT, ZENER DIODES • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEP

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CDI-DIODE