AO4705L

P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

GeneralDescription TheAO4705usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ASchottkydiodeisprovidedtofacilitatetheimplementationofnon-synchronousDC-DCconverters.StandardProductAO4705isPb-free(meetsROHS&Sony259specifications).AO4705

AON4705L

P-ChannelEnhancementModeFieldEffectTransistorwithSchottkyDiode

GeneralDescription TheAON4705LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ASchottkydiodeisprovidedtofacilitatetheimplementationofabidirectionalblockingswitch,orforbuckconverterapplications. -RoHSCompliant -HalogenFree Features V

BCM4705

Intensi-fiGigabitEthernetDraft-802.11nProcessor

FEATURES •Advanced500DMIPS/300-MHzMIPS32®core •4-waysetassociative32-KBI-Cache •2-waysetassociative32-KBD-Cache •4-KBRead-AheadCache •MMU/TLBsupportforLinux® •AdvancedGigabitEthernetMAC •HardwareTCPsegmentationandChecksumoffload •GMII,RGMII

BMOY4705

Black,OptimizedWeldedYagiAntennas,NoTune

Description Optimalperformanceand durabilityacrossall 400/900MHzandUHF frequencybands Features Coversall800/900MHzfrequencieswith notuningrequired 360°weldsatelementandboominterface protectagainstmoisture Heavy-duty,robustmaterials Horizontalorverticalpolar

BTZS4705

SILICONEPITAXIALPLANARZENERDIODES

C4705

2500WATTS(AC)DC/DCSINGLEOUTPUT

Features •SingleOutput •6Ux28TEx306mm •Weight9.0kg

CD4705

ZENERDIODECHIPS

•ZENERDIODECHIPS •ALLJUNCTIONSCOMPLETELYPROTECTEDWITHSILICONDIOXIDE •ELECTRICALLYEQUIVALENTTO1N4678THRU1N4717 •0.5WATTCAPABILITYWITHPROPERHEATSINKING •50µA,LOWOPERATINGCURRENT,ZENERDIODES •COMPATIBLEWITHALLWIREBONDINGANDDIEATTACHTECHNIQUES,WITHTHEEXCEP

CDLL4705

50uA,LOWOPERATINGCURRENT,ZENERDIODES

•50µA,LOWOPERATINGCURRENT,ZENERDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED

CLL4705

SURFACEMOUNTLOWLEVELSILICONZENERDIODES

CLL4705

SURFACEMOUNTLOWLEVELSILICONZENERDIODES1.8VOLTSTHRU43VOLTS500mW,5TOLERANCE