Complementary Enhancement Mode Field Effect Transistor

General Description The AO4622 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Product Summary N-Channel P-

文件：189.19 Kbytes 页数：7 Pages

AOSMD

万国半导体

丝印：4622；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 20V ID = 7.3 A (VGS = 4.5V) RDS(ON)

文件：1.98075 Mbytes 页数：7 Pages

KEXIN

科信电子

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.23216 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

N-Chanel and P-Channel MOSFET use advanced trench technology

Description： This N-Channel and P-Channel MOSFET use advanced trench Technology To provide excellent RDS(ON), low gate charge. This device may be usedto form a level shifted high side switch, and for a host of other application. Features： N-Channel:V DS=20V,ID=6.8A,RDS(ON)

文件：2.69506 Mbytes 页数：9 Pages

DOINGTER

杜因特

20V Dual P N-Channel MOSFET

文件：257.48 Kbytes 页数：9 Pages

AOSMD

万国半导体

MOSFET：Complementary

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

丝印：4622；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 20V ID = 7.3 A (VGS = 4.5V) RDS(ON)

文件：3.13992 Mbytes 页数：7 Pages

KEXIN

科信电子

20V Dual P N-Channel MOSFET

文件：257.48 Kbytes 页数：9 Pages

AOSMD

万国半导体