Complementary Enhancement Mode Field Effect Transistor

General Description The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4615 is Pb-

文件：194.2 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description\nThe AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge.\nThe complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other\napplications. It is ESD protected. Standard product AO4615 is Pb-free (me n-channel p-channel\nVDS(V) = 30V -30V\nID= 7.2A (VGS=10V) -5.7A (VGS=10V)\nRDS(ON)  RDS(ON)\n< 24mΩ(VGS=10V) < 39mΩ(VGS= -10V)\n< 40mΩ(VGS=4.5V) < 62mΩ(VGS= -4.5V)\nESD rating: 1500V (HBM)\nP-channel MOSFET has an additional ROC< 1MΩfor\nopen circuit protection.;

AOS

美国万代

Advanced Process Technology Low On-Resistance

文件：295.25 Kbytes 页数：13 Pages

IRF

Advanced Process Technology Low On-Resistance

文件：295.25 Kbytes 页数：13 Pages

IRF

Advanced Process Technology Low On-Resistance

文件：295.25 Kbytes 页数：13 Pages

IRF