Complementary Enhancement Mode Field Effect Transistor

General Description The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4613 is Pb-free (m

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AOSMD

万国半导体

DC / DC Converters

文件：46.44 Kbytes 页数：1 Pages

HOKURIKUHOKURIKU ELECTRIC INDUSTRY CO.,LTD

北陆电气工业日本北陆电气工业柱式会社

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 7.2 A (VGS = 10V) RDS(ON)

文件：2.2004 Mbytes 页数：7 Pages

KEXIN

科信电子

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 7.2 A (VGS = 10V) RDS(ON)

文件：3.11686 Mbytes 页数：7 Pages

KEXIN

科信电子