Complementary Enhancement Mode Field Effect Transistor

General Description The AO4625 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.Standard Product AO4625 is Pb free (meets ROHS & Sony 259 specifications). AO4625L is a

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AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description\nThe AO4625 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The\ncomplementary MOSFETs may be used in power inverters, and other applications.Standard Product AO4625 is Pb free (meets ROHS & Sony 259 specifications). AO4625L is a Green Pro n-channel p-channel\nVDS(V) = 30V -30V\nID= 6.9A (VGS=10V) -5.4A (VGS= -10V)\nRDS(ON)  RDS(ON)\n< 28mΩ(VGS=10V) < 45mΩ(VGS= -10V)\n< 42mΩ(VGS=4.5V) < 75mΩ(VGS= -4.5V);

AOS

美国万代

ZENER DIODE CHIPS

• 1N4614 THRU 1N4627 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/435 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N4614 THRU 1N4627 • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTAC

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CDI-DIODE

LEADLESS PACKAGE FOR SURFACE MOUNT

• 1N4614UR-1 THRU 1N4627UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED

文件：109.68 Kbytes 页数：2 Pages

CDI-DIODE

LEADLESS PACKAGE FOR SURFACE MOUNT

• 1N4614UR-1 THRU 1N4627UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED

文件：122.75 Kbytes 页数：2 Pages

Microsemi

美高森美