Complementary Enhancement Mode Field Effect Transistor

General Description The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses. Standard Pr

文件：210.84 Kbytes 页数：9 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description\nThe AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The\ncomplementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses.  Standard Product n-channel p-channel\nVDS(V) = 30V -30V\nID= 8.5A(VGS=10V) -7.1A(VGS= -10V)\nRDS(ON)  RDS(ON)\n< 18mΩ(VGS=10V) < 25mΩ(VGS= -10V)\n< 28mΩ(VGS=4.5V) < 40mΩ(VGS= -4.5V)\nVF<0.5V@1A;

AOS

美国万代

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses. Standard Pr

文件：210.84 Kbytes 页数：9 Pages

AOSMD

万国半导体

0.400-INCH SEVEN SEGMENT DISPLAYS

文件：624.36 Kbytes 页数：7 Pages

QT

Double Ended Mold Type Phototransistors

Features 1. Compact double ended mold package (Packaging area : 37 smaller than PT480) 2. Narrow beam angle (Half intensity angle : ± 20˚ Light sensitivity : 3 times as large as PT460 series) 3. Darlington output type (PT4610), visible light cut-off type (PT4600F/4610F/4650F), VCR tape end dete

文件：61.43 Kbytes 页数：5 Pages

SHARPSharp Corporation

夏普

Bipolar Integrated Circuit with Photodetection Function

For infrared remote control systems Features Extension distance is 8 m or more External parts not required Adoption of visible light cutoff resin

文件：49.24 Kbytes 页数：3 Pages

PANASONIC

松下