Complementary Enhancement Mode Field Effect Transistor

General Description The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses. Standard Pr

文件：210.84 Kbytes 页数：9 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description\nThe AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The\ncomplementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses.  Standard Product n-channel p-channel\nVDS(V) = 30V -30V\nID= 8.5A(VGS=10V) -7.1A(VGS= -10V)\nRDS(ON)  RDS(ON)\n< 18mΩ(VGS=10V) < 25mΩ(VGS= -10V)\n< 28mΩ(VGS=4.5V) < 40mΩ(VGS= -4.5V)\nVF<0.5V@1A;

AOS

美国万代

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses. Standard Pr

文件：210.84 Kbytes 页数：9 Pages

AOSMD

万国半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：113.66 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

AUTOMOTIVE GRADE

文件：346.53 Kbytes 页数：13 Pages

IRF

AUTOMOTIVE GRADE

文件：723.1 Kbytes 页数：11 Pages

Infineon

英飞凌