Complementary Enhancement Mode Field Effect Transistor

General Description The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses. Standard Pr

文件：210.84 Kbytes 页数：9 Pages

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A-POWER

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IRF

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英飞凌