Complementary Enhancement Mode Field Effect Transistor

General Description The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AO4612 is Pb-free (meets ROHS & Sony 259 specifications). AO4612L is a

文件：142.98 Kbytes 页数：7 Pages

AOSMD

万国半导体

丝印：4612；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 60V ID = 4.5 A (VGS = 10V) RDS(ON)

文件：2.54125 Mbytes 页数：7 Pages

KEXIN

科信电子

N-Chanel and P-Channel MOSFET use advanced trench technology

Description： This N-Chanel and P-Channel MOSFET use advanced trench technology to provide excellent RDS(ON), low gate charge. This device may be used to form a level shifted high side switch, and for a host of other application. Features： N-Channel: VDS=60V,ID=4.5A,RDS(ON)

文件：2.72031 Mbytes 页数：7 Pages

DOINGTER

杜因特

60V Complementary Enhancement Mode Field Effect Transistor

文件：482.01 Kbytes 页数：9 Pages

AOSMD

万国半导体

互补型功率MOSFETs

60V Complementary Enhancement Mode Field Effect Transistor

AOS

美国万代

MOSFET

MTW

美台微

场效应管

HXY MOSFET

华轩阳电子

丝印：4612；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 60V ID = 4.5 A (VGS = 10V) RDS(ON)

文件：4.0017 Mbytes 页数：7 Pages

KEXIN

科信电子

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AO4612 is Pb-free (meets ROHS & Sony 259 specifications). AO4612L is a

文件：142.98 Kbytes 页数：7 Pages

AOSMD

万国半导体

60V Complementary Enhancement Mode Field Effect Transistor

文件：482.01 Kbytes 页数：9 Pages

AOSMD

万国半导体