AO4601L

Complementary Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4601usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.StandardProductAO4601isPb-free(meetsROHS&Sony

AZ4601

QL(AZ4)MicroLimitSwitch

FEATURES 1.Subminiaturedesign Thesizeoftheactualunitisapproximately 1/10inthecaseoftheplunger modelandapproximately1/6.5inthe caseofthearmmodel,thatofthevertical typelimitswitch. Large-scaleminiaturizationhasbeen achieved.Idealforminiaturizedmachinery

BDA4601

6bitDigitalStepAttenuator

CLA4601

SiliconLimiterDiodesandCeramicHermeticPackagedDevices

Features Establishedlimiterdiodeprocess Highpower,mid-range,andcleanupdesigns Lowinsertionloss:0.1dB@10GHz Peakpowerhandlingto+74dBm Ultralowspikeleakagepower TightcontrolofIlayerbasewidth

CLC4601

Dual,Triple,andQuad550MHzAmplifiers

CLC4601

Dual,Triple,andQuad550MHzAmplifiers

CY4601

USBtoSerial

EFC4601

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features •2.5Vdrive. •BestsuitedforLiBcharginganddischargingswitch. •Common-draintype.

EFC4601R

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features •2.5Vdrive. •BestsuitedforLiBcharginganddischargingswitch. •Common-draintype.

EVAL-ADAV4601EBZ

AudioProcessorforAdvancedTV