Complementary Enhancement Mode Field Effect Transistor

General Description The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4609 is Pb-free (meets ROHS & Sony

文件：656.25 Kbytes 页数：7 Pages

AOSMD

万国半导体

丝印：4609；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8.5 A (VGS = 10V) RDS(ON)

文件：1.76277 Mbytes 页数：7 Pages

KEXIN

科信电子

Complementary Enhancement Mode Field Effect Transistor

文件：690.95 Kbytes 页数：12 Pages

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MOSFET：Complementary

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

丝印：4609；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8.5 A (VGS = 10V) RDS(ON)

文件：2.41207 Mbytes 页数：7 Pages

KEXIN

科信电子

Complementary Enhancement Mode Field Effect Transistor

文件：690.95 Kbytes 页数：12 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商