Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

文件：144.64 Kbytes 页数：7 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Complementary Enhancement Mode Field Effect Transistor

Microchip

微芯科技

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

文件：144.64 Kbytes 页数：7 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Complementary Enhancement Mode Field Effect Transistor

General Description\nThe AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony 259 sp n-channel                  p-channel\nVDS (V) = 30V            -30V\nID = 4.7A (VGS=10V)    -5.8A (VGS = -10V)\nRDS(ON)                     RDS(ON);

Microchip

微芯科技