AO4603L

Complementary Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4603usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.StandardproductAO4603isPb-free(meetsROHS&Sony

AON4603

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAON4603usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAON4603isPb-free(meetsROHS&Sony259specifications).

AZ4603

QL(AZ4)MicroLimitSwitch

FEATURES 1.Subminiaturedesign Thesizeoftheactualunitisapproximately 1/10inthecaseoftheplunger modelandapproximately1/6.5inthe caseofthearmmodel,thatofthevertical typelimitswitch. Large-scaleminiaturizationhasbeen achieved.Idealforminiaturizedmachinery

CLA4603

SiliconLimiterDiodesandCeramicHermeticPackagedDevices

Features Establishedlimiterdiodeprocess Highpower,mid-range,andcleanupdesigns Lowinsertionloss:0.1dB@10GHz Peakpowerhandlingto+74dBm Ultralowspikeleakagepower TightcontrolofIlayerbasewidth

CTNS-4603S

LowVFandHighPowerDiode

Description TheCTNS-4603Sisa300V,60A,fastrecoverydiode.ThemaximumVFof1.2Vandthemaximumtrrof100ns(IF:IRP=1:1)arerealizedbyoptimizingthetrade-offrelationshipbetweenVFandtrr.Thelowthermalresistancepackageachieveshighperformanceintermsofheatdissip

CTXS-4603S

FastRecoveryandHighPowerDiode

Features TheCTXS-4603Sisahighpowerandfastrecoverydiodewhichrealizeapeakreversevoltageof300V,atypicalforwardvoltagedropof1.05V(typ.)andtypicaltrr-timeof32ns(typ.)optimizingalife-timecontrol.Itsupportshigh-speedswitchingandreducesforward-loss. Thelowt

EVQP4603M

LightTouchSwitches/EVQP4/P8

FAN4603

600mA,FullyIntegrated,BuckPowerSupplyModule

FG4603

FiberglassOmnidirectionalWirelessAntennas

GC4603

CONTROLDEVICESHighPowerPINDiodes