Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

文件：144.64 Kbytes 页数：7 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Complementary Enhancement Mode Field Effect Transistor

General Description\nThe AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony 259 sp n-channel                  p-channel\nVDS (V) = 30V            -30V\nID = 4.7A (VGS=10V)    -5.8A (VGS = -10V)\nRDS(ON)                     RDS(ON);

Microchip

微芯科技

Complementary Enhancement Mode Field Effect Transistor

General Description The AON4603 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4603 is Pb-free (meets ROHS & Sony 259 specifications).

文件：155.65 Kbytes 页数：7 Pages

AOSMD

万国半导体

QL (AZ4) Micro Limit Switch

FEATURES 1. Subminiature design The size of the actual unit is approximately 1/10 in the case of the plunger model and approximately 1/6.5 in the case of the arm model, that of the vertical type limit switch. Large-scale miniaturization has been achieved. Ideal for miniaturized machinery

文件：677.11 Kbytes 页数：21 Pages

Panasonic

松下

Silicon Limiter Diodes and Ceramic Hermetic Packaged Devices

Features  Established limiter diode process  High power, mid-range, and cleanup designs  Low insertion loss: 0.1 dB @ 10 GHz  Peak power handling to +74 dBm  Ultra low spike leakage power  Tight control of I layer base width

文件：402.69 Kbytes 页数：9 Pages

SKYWORKS

思佳讯