丝印：4604；Package：SO-8；Complementary Enhancement Mode Field Effect Transistor

General Description The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS(ON)and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications AO4604 and AO4604L are electrically identical. ​​​​​​​ -RoHS Compliant -AO4604L is Halogen Fre

文件：825.16 Kbytes 页数：9 Pages

AOSMD

万国半导体

丝印：4604；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON)

文件：3.41717 Mbytes 页数：7 Pages

KEXIN

科信电子

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.23281 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

丝印：4604；Package：SO-8；Complementary Enhancement Mode Field Effect Transistor

文件：343.96 Kbytes 页数：9 Pages

AOSMD

万国半导体

MOSFET：Complementary

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.23184 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

丝印：4604；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON)

文件：3.97856 Mbytes 页数：7 Pages

KEXIN

科信电子

Complementary Enhancement Mode Field Effect Transistor

文件：343.96 Kbytes 页数：9 Pages

AOSMD

万国半导体