Complementary Enhancement Mode Field Effect Transistor

General Description The AO4607 uses advanced trench technology MOSFETs to provide excellen RDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n channel FET to minimize body diode losses. AO4607 is Pb-

文件：198.87 Kbytes 页数：8 Pages

AOSMD

万国半导体

QL (AZ4) Micro Limit Switch

FEATURES 1. Subminiature design The size of the actual unit is approximately 1/10 in the case of the plunger model and approximately 1/6.5 in the case of the arm model, that of the vertical type limit switch. Large-scale miniaturization has been achieved. Ideal for miniaturized machinery

文件：677.11 Kbytes 页数：21 Pages

Panasonic

松下

Silicon Limiter Diodes and Ceramic Hermetic Packaged Devices

Features  Established limiter diode process  High power, mid-range, and cleanup designs  Low insertion loss: 0.1 dB @ 10 GHz  Peak power handling to +74 dBm  Ultra low spike leakage power  Tight control of I layer base width

文件：402.69 Kbytes 页数：9 Pages

SKYWORKS

思佳讯

Fiberglass Omnidirectional Wireless Antennas

文件：86.55 Kbytes 页数：2 Pages

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