N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.23184 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON)

文件：3.97856 Mbytes 页数：7 Pages

KEXIN

科信电子

Complementary Enhancement Mode Field Effect Transistor

General Description The AON4604 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4604 is Pb-free (meets ROHS & Sony 259 specifications).

文件：160.75 Kbytes 页数：7 Pages

AOSMD

万国半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：110.22 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子