Complementary Enhancement Mode Field Effect Transistor

General Description The AON4603 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4603 is Pb-free (meets ROHS & Sony 259 specifications).

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AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

AOS

美国万代

QL (AZ4) Micro Limit Switch

FEATURES 1. Subminiature design The size of the actual unit is approximately 1/10 in the case of the plunger model and approximately 1/6.5 in the case of the arm model, that of the vertical type limit switch. Large-scale miniaturization has been achieved. Ideal for miniaturized machinery

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PANASONIC

松下

Silicon Limiter Diodes and Ceramic Hermetic Packaged Devices

Features  Established limiter diode process  High power, mid-range, and cleanup designs  Low insertion loss: 0.1 dB @ 10 GHz  Peak power handling to +74 dBm  Ultra low spike leakage power  Tight control of I layer base width

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SKYWORKS

思佳讯

Low VF and High Power Diode

Description The CTNS-4603S is a 300 V, 60 A, fast recovery diode. The maximum VF of 1.2 V and the maximum trr of 100 ns (IF : IRP = 1 : 1) are realized by optimizing the trade-off relationship between VF and trr. The low thermal resistance package achieves high performance in terms of heat dissip

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SANKEN

三垦