Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON5802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swi

文件：126.39 Kbytes 页数：4 Pages

AOSMD

万国半导体

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

Package：6-WFDFN 裸露焊盘；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：MOSFET N-CH DUAL DFN

Alpha \u0026 Omega Semiconductor Inc.

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON5802B/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by

文件：435.26 Kbytes 页数：5 Pages

AOSMD

万国半导体

Preliminary 4-Channel driver Power Controller

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Aimtron

Single-Chip Security Processor

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BOARDCOM

博通