Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON5802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swi

文件：3.28545 Mbytes 页数：4 Pages

AOSMD

万国半导体

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON5802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swi

文件：126.39 Kbytes 页数：4 Pages

AOSMD

万国半导体

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON5802B/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by

文件：435.26 Kbytes 页数：5 Pages

AOSMD

万国半导体

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

文件：126.39 Kbytes 页数：4 Pages

AOSMD

万国半导体

低压共漏电池 MOSFET

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术用于锂电池的保护。这些“共漏”MOSFET具有低Rdson，可快速充电及延长电池寿命。 同时， Alpha and Omega Semiconductor拥有先进的CPS技术，拥有该技术的RigidCSP™系列产品，可以减少其在焊接过程中的翘曲，提高了产品在应用中的可靠性。

AOS

美国万代

低压MOSFET (12V - 30V)

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术制造出性能领先的低压MOSFET。这些产品为DCDC、负载开关、BLDC及电源等应用量身定做。

AOS

美国万代

Package：6-WFDFN 裸露焊盘；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：MOSFET N-CH DUAL DFN

Alpha \u0026 Omega Semiconductor Inc.

Package：6-WFDFN 裸露焊盘；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：MOSFET N-CH DUAL DFN

Alpha \u0026 Omega Semiconductor Inc.