Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON5810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load swit

文件：404.81 Kbytes 页数：4 Pages

AOSMD

万国半导体

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

CD / CD-ROM ?ⓦ깋?⒲궎?륤C

Driver IC for CD / CD-ROM BA5810FP is a 5CH driver with 4CH BTL driver for CD/CD-ROM and 1CH reversible driver. 4CH 2CH can be used as a stepping motor driver. Power supply for PREVCC and power transistor (CH1,2 and CH3,4) Since it is independent, efficient drive is possible. The power save termi

文件：115.3 Kbytes 页数：9 Pages

ROHM

罗姆

CD / CD-ROM ?ⓦ깋?⒲궎?륤C

Driver IC for CD / CD-ROM BA5810FP is a 5CH driver with 4CH BTL driver for CD/CD-ROM and 1CH reversible driver. 4CH 2CH can be used as a stepping motor driver. Power supply for PREVCC and power transistor (CH1,2 and CH3,4) Since it is independent, efficient drive is possible. The power save termi

文件：115.3 Kbytes 页数：9 Pages

ROHM

罗姆

CPH5810

文件：64.599 Kbytes 页数：5 Pages

SANYO

三洋