AON5810中文资料万国半导体数据手册PDF规格书
AON5810规格书详情
General Description
The AON5810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. Standard Product AON5810 is Pb-free (meets ROHS & Sony 259 specifications). AON5810L is a Green Product ordering option. AON5810 and AON5810L are electrically identical.
Features
VDS (V) = 20V
ID = 7.7 A (VGS = 4.5V)
RDS(ON) < 18 mΩ (VGS = 4.5V)
RDS(ON) < 19 mΩ (VGS = 4.0V)
RDS(ON) < 21 mΩ (VGS = 3.1V)
RDS(ON) < 25 mΩ (VGS = 2.5V)
RDS(ON) < 40 mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
产品属性
- 型号:
AON5810
- 功能描述:
MOSFET 2N-CH 20V 7.7A DFN2X5
- RoHS:
是
- 类别:
分离式半导体产品 >> FET - 阵列
- 系列:
-
- 产品目录绘图:
8-SOIC Mosfet Package
- 标准包装:
1
- 系列:
- FET
- 型:
2 个 N 沟道(双) FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
60V 电流 - 连续漏极(Id) @ 25°
- C:
3A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
75 毫欧 @ 4.6A,10V Id 时的
- Vgs(th)(最大):
3V @ 250µA 闸电荷(Qg) @
- Vgs:
20nC @ 10V 输入电容(Ciss) @
- Vds:
- 功率 -
- 最大:
1.4W
- 安装类型:
表面贴装
- 封装/外壳:
PowerPAK? SO-8
- 供应商设备封装:
PowerPAK? SO-8
- 包装:
Digi-Reel®
- 产品目录页面:
1664(CN2011-ZH PDF)
- 其它名称:
SI7948DP-T1-GE3DKR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AOS(万代) |
23+ |
标准封装 |
20000 |
正规渠道,只有原装! |
询价 | ||
AOS |
19+ |
DFN |
63402 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | ||
AOS(万代) |
24+ |
标准封装 |
48573 |
我们只是原厂的搬运工 |
询价 | ||
AOS |
24+ |
DFN |
9800 |
一级代理/全新原装现货/长期供应! |
询价 | ||
AOS/万代 |
2019+ |
DFN |
3470 |
原厂渠道 可含税出货 |
询价 | ||
台产 |
18PB |
XX |
1 |
优势 |
询价 | ||
AOS/万代 |
23+ |
DFN25 |
24190 |
原装正品代理渠道价格优势 |
询价 | ||
AOS/万代 |
25+ |
DFN2x5 |
188600 |
全新原厂原装正品现货 欢迎咨询 |
询价 | ||
AOS/万代 |
23+ |
DFN2X5 |
36520 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
AOS/万代 |
25+ |
DFN25 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
询价 |