N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4458/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use as a load switch or in PWM applications. AO4458 and AO4458L are electrically identical. -RoHs Compliant -AO4458

文件：138.01 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4458/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use as a load switch or in PWM applications. AO4458 and AO4458L are electrically identical.\n   -RoHs Compliant\n   -AO4458L is Hal   VDS (V) = 30V\n  ID = 20A (VGS = 10V)\n  RDS(ON) < 4.6mΩ (VGS = 10V)\n  RDS(ON) < 6.4mΩ (VGS = 4.5V) ;

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美国万代

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