N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4476 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AO4476 is Pb-free (meets ROHS & Sony 259 specifications). Features

文件：110.69 Kbytes 页数：4 Pages

AOSMD

万国半导体

丝印：4476；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 15 A (VGS = 10V) ● RDS(ON)

文件：1.25259 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.0065 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

30V N-Channel MOSFET

General Description The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications. Product Summary VDS 30

文件：2.64606 Mbytes 页数：6 Pages

WHXPCB

万和兴电子

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=10.3A,RDS(ON)

文件：512.659 Kbytes 页数：5 Pages

DOINGTER

杜因特

丝印：4476A；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 15 A (VGS = 10V) ● RDS(ON)

文件：2.03681 Mbytes 页数：5 Pages

KEXIN

科信电子

30V N-Channel MOSFET

General Description The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications. Product Summary VDS

文件：371.04 Kbytes 页数：6 Pages

AOSMD

万国半导体

丝印：4476A；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 15 A (VGS = 10V) ● RDS(ON)

文件：2.83987 Mbytes 页数：5 Pages

KEXIN

科信电子

丝印：4476；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 15 A (VGS = 10V) ● RDS(ON)

文件：1.44427 Mbytes 页数：4 Pages

KEXIN

科信电子