AO4476

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4476usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.ThisdeviceissuitableforuseasahighsideswitchinSMPSandgeneralpurposeapplications.StandardProductAO4476isPb-free(meetsROHS&Sony259specifications). Features

AO4476

N-Channel 20V (D-S) MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

AO4476

Marking：4476；Package：SOP-8；N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=15A(VGS=10V) ●RDS(ON)

AO4476A

N-Channel MOSFET uses advanced trench technology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=30V,ID=10.3A,RDS(ON)

AO4476A

30V N-Channel MOSFET

GeneralDescription TheAO4476AcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).ThisdeviceissuitableforuseasahighsideswitchinSMPSandgeneralpurposeapplications. ProductSummary VDS

AO4476A

Marking：4476A；Package：SOP-8；N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=15A(VGS=10V) ●RDS(ON)

AO4476A

30V N-Channel MOSFET

GeneralDescription TheAO4476AcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).ThisdeviceissuitableforuseasahighsideswitchinSMPSandgeneralpurposeapplications. ProductSummary VDS30

AO4476A-HF

Marking：4476A；Package：SOP-8；N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=15A(VGS=10V) ●RDS(ON)

AO4476-HF

Marking：4476；Package：SOP-8；N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=15A(VGS=10V) ●RDS(ON)