AO4600L

Complementary Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4600usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO4600isPb-free(meetsROHS&Sony259specifications).AO

B4600

600mALowDropoutVoltageRegulators

C4600

OCXOStandardPackageLowAgingAT-CutandSC-CutCrystalOptionsFastWarm-up

Features StandardPackage LowAging AT-CutandSC-CutCrystalOptions FastWarm-up TypicalApplications BaseStations DigitalSwitching Synthesizers TestEquipment

C4600

ElectronicFrequencyControlInput(EFC)

CDM4600LR

600V,N-ChannelUltraMOS??PowerMOSFETs

CHM4600JPT

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT7.3Ampere P-channel:VOLTAGE30VoltsCURRENT4.6Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomo

CLC4600

Dual,Triple,andQuad300MHzAmplifiers

D4600U

Fullblockingcapability50/60Hzoverawidetemperaturerange

E4600

Core2ExtremeProcessor

F4600

LV-PECL7x5mm3.3VOSCILLATOR