N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4464 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour

文件：167.94 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4464 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour

文件：167.94 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel 200-V (D-S) MOSFET

Features ● PWM Optimized for (Lowest Qg and Low RG) ● TrenchFET Power MOSFET

文件：49.59 Kbytes 页数：2 Pages

KEXIN

科信电子

Single/Dual/Quad, 1.8V/750nA, SC70, Rail-to-Rail Op Amps

文件：737.95 Kbytes 页数：14 Pages

Maxim

美信

Single/Dual/Quad, 1.8V/750nA, SC70, Rail-to-Rail Op Amps

文件：631.68 Kbytes 页数：19 Pages

Maxim

美信