N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4470 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO447

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AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4470 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO4470 is VDS(V) = 30V\nID= 18A (VGS= 10V)\nRDS(ON) < 5.5mΩ(VGS= 10V)\nRDS(ON)< 6.2mΩ  (VGS= 4.5V);

AOS

美国万代

EDAC4xx0 - Series

Product Description Grounding Rail for E-Series Cabinets. Solid copper rod (5x20mm) available for horizontal and 15U, 18U, 22U, 27U, 32U, 37U, 42U, 45U, 47U vertical mounting.

文件：165.66 Kbytes 页数：1 Pages

BELDEN

百通

40V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 12.

文件：87.99 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

40V N-Channel PowerTrench짰 MOSFET

文件：151.32 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体