Lower Gate Charge, Simple Drive Requirement

文件：98.86 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：98.86 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-Channel Enhancement Mode MOSFET

Features • 30V/12.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Syst

文件：108.54 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/12.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Syst

文件：118.14 Kbytes 页数：10 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/12.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Syst

文件：108.54 Kbytes 页数：9 Pages

ANPEC

茂达电子