N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic

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A-POWER

富鼎先进电子

Simple Drive Requirement

文件：90.65 Kbytes 页数：7 Pages

A-POWER

富鼎先进电子

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description\nAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.▼ Simple Drive Requirement\n▼ Low On-resistance\n▼ Fast Switching Characteristic

APEC

富鼎先进

GaAlAs Red Light Emitting Diode

GaAlAs Red Light Emitting Diode For optical fiber communications and control systems Features ● Red light emission close to monochromatic light : λP = 680 nm ● High-power output, high-efficiency : PO = 3 mW ● High coupling characteristics and suits to a plastic fiber ● High-speed response :

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PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

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PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half.

文件：33.06 Kbytes 页数：2 Pages

PANASONIC

松下