Simple Drive Requirement, Low On-resistance

文件：130.02 Kbytes 页数：7 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：130.02 Kbytes 页数：7 Pages

A-POWER

富鼎先进电子

Fast Switching Performance

文件：89.1 Kbytes 页数：8 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

文件：371.04 Kbytes 页数：4 Pages

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：308.95 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：344.38 Kbytes 页数：2 Pages

ISC

无锡固电