N-Channel Enhancement Mode MOSFET

Features • 30V/12.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Syst

文件：108.54 Kbytes 页数：9 Pages

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N-Channel Enhancement Mode MOSFET

• 30V/12.5A,\n   RDS(ON)=6mΩ(typ.) @ VGS=10V\n   RDS(ON)=10mΩ(typ.) @ VGS=4.5V\n• Super High Dense Cell Design for\n   Extremely Low RDS(ON)\n• Reliable and Rugged\n• SO-8 PackageApplications\n• Power Management in Notebook Computer ,\n   Portable Equipment and Battery Powered\n   Systems .;

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N-Channel Enhancement Mode MOSFET

Features • 30V/12.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Syst

文件：118.14 Kbytes 页数：10 Pages

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N-Channel Enhancement Mode MOSFET

Features • 30V/12.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Syst

文件：108.54 Kbytes 页数：9 Pages

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N-Channel Enhancement Mode MOSFET

Features • 30V/12.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Syst

文件：118.14 Kbytes 页数：10 Pages

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N-Channel Enhancement Mode MOSFET

Features • 30V/12.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Syst

文件：118.14 Kbytes 页数：10 Pages

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N-Channel Enhancement Mode MOSFET

Features • 30V/12.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Syst

文件：118.14 Kbytes 页数：10 Pages

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N-Channel Enhancement Mode MOSFET

Features • 30V/12.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Syst

文件：108.54 Kbytes 页数：9 Pages

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茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/12.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Syst

文件：118.14 Kbytes 页数：10 Pages

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30 V, N-channel enhancement mode MOSFET

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