Dual Enhancement Mode MOSFET (N- and P-Channel)

Features · N-Channel 30V/7A, RDS(ON) = 20mW (typ.) @ VGS = 10V RDS(ON) = 30mW (typ.) @ VGS = 4.5V · P-Channel -30V/-5A, RDS(ON) = 40mW (typ.) @ VGS = -10V RDS(ON) = 62mW (typ.) @ VGS = -4.5V · Super High Dense Cell Design · Reliable and Rugged · Lead Free and Green De

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Dual Enhancement Mode MOSFET (N- and P-Channel)

Features · N-Channel 30V/7A, RDS(ON) = 20mW (typ.) @ VGS = 10V RDS(ON) = 30mW (typ.) @ VGS = 4.5V · P-Channel -30V/-5A, RDS(ON) = 40mW (typ.) @ VGS = -10V RDS(ON) = 62mW (typ.) @ VGS = -4.5V · Super High Dense Cell Design · Reliable and Rugged · Lead Free and Green De

文件：242.1 Kbytes 页数：13 Pages

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N- and P-Channel 30 V (D-S) MOSFET

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Dual Enhancement Mode MOSFET (N- and P-Channel)

· N-Channel 30V/7A,\nRDS(ON) = 20mW (typ.) @ VGS = 10V\nRDS(ON) = 30mW (typ.) @ VGS = 4.5V\n· P-Channel\n-30V/-5A,\nRDS(ON) = 40mW (typ.) @ VGS = -10V\nRDS(ON) = 62mW (typ.) @ VGS = -4.5V\n· Super High Dense Cell Design\n· Reliable and Rugged\n· Lead Free and Green DevicesAvailable\n(RoHS Compliant);

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