Dual Enhancement Mode MOSFET (N- and P-Channel)

Features · N-Channel 30V/7A, RDS(ON) = 20mW (typ.) @ VGS = 10V RDS(ON) = 30mW (typ.) @ VGS = 4.5V · P-Channel -30V/-5A, RDS(ON) = 40mW (typ.) @ VGS = -10V RDS(ON) = 62mW (typ.) @ VGS = -4.5V · Super High Dense Cell Design · Reliable and Rugged · Lead Free and Green De

文件：242.1 Kbytes 页数：13 Pages

ANPEC

茂达电子

N- and P-Channel 30 V (D-S) MOSFET

文件：1.23698 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：309.98 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：344.72 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：297.78 Kbytes 页数：2 Pages

ISC

无锡固电