isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

无锡固电

SYSDRIVE 3G3HV Series

文件：173.29 Kbytes 页数：20 Pages

OMRON

欧姆龙

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collecto

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PHI

PHI

OCXO Surface Mount Package Optional Reflow Process Compatible Optional AT-Cut and SC-Cut Crystal Options Low Profile Compact Package

Stratum 3E Features Low Profile, Compact Package Stratum 3E Stability SC-Cut Crystal Typical Applications SONET/SDH Transmission Systems

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VECTRON