Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS VI™ Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Cissand Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers

文件：35.92 Kbytes 页数：2 Pages

ADPOW

POWER MOS VI 500V 44A 0.100 Ohm

APT

晶科

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

文件：61.27 Kbytes 页数：2 Pages

ADPOW

POWER MOS 7 MOSFET

文件：174.33 Kbytes 页数：5 Pages

ADPOW

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

文件：60.44 Kbytes 页数：4 Pages

ADPOW