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APT5020BNR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT5020BVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

APT5020BVFR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT5020BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitchi

ADPOW

Advanced Power Technology

APT5020BVR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT5020DN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmodep

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT5020SLC

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss. LowergatechargecoupledwithPowerMOSVI™optimizedgatelayout,deliversexceptionall

ADPOW

Advanced Power Technology

APT5020SVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecoveryBody

ADPOW

Advanced Power Technology

APT5020SVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitc

ADPOW

Advanced Power Technology

AS5020

6-BITMAGNETICANGULARPOSITIONENCODERWITHSERIALINTERFACE

GeneralDescription Thedeviceprovidestheabsoluteangularpositionofasimplemagnetthatisplacedunderorabovethedevice’ssurface.ThedeviceincludestheHallSensorArray,signalconditioningandpostprocessingneededtogeneratea6-bitbinarycode.Thebinarycodecanbeeasilyacc

AMSCOams AG

艾迈斯欧司朗艾迈斯欧司朗股份公司

详细参数

  • 型号:

    APT5020BNG

  • 制造商:

    Microsemi Corporation

  • 功能描述:

    POWER MOSFET TRANSISTOR

供应商型号品牌批号封装库存备注价格
Microch
20+
NA
33560
原装优势主营型号-可开原型号增税票
询价
MICROCHIP
23+
7300
专注配单,只做原装进口现货
询价
MICROCHIP
23+
7300
专注配单,只做原装进口现货
询价
24+
1100
询价
PHI
2020+
TO3P
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
APT
22+
TO-264
8200
原装现货库存.价格优势!!
询价
APT
23+
TO247
50000
全新原装正品现货,支持订货
询价
APT
23+
TO-247
60300
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
APT
22+
TO-247
8000
原装正品支持实单
询价
APT
23+
2800
正品原装货价格低
询价
更多APT5020BNG供应商 更新时间2025-7-25 17:49:00