isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：311.27 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 21A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：296.99 Kbytes 页数：2 Pages

ISC

无锡固电

Ultra-Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)

文件：1.264 Mbytes 页数：23 Pages

AWINIC

艾为电子

Ultra-Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)

文件：1.264 Mbytes 页数：23 Pages

AWINIC

艾为电子