isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：345.06 Kbytes 页数：2 Pages

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无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：345.08 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：297.6 Kbytes 页数：2 Pages

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无锡固电

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

文件：52.47 Kbytes 页数：4 Pages

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isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：311.96 Kbytes 页数：2 Pages

ISC

无锡固电