首页 >APT5017>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

APT5017

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. •

文件:63.68 Kbytes 页数:4 Pages

ADPOW

APT5017BLC

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS VI™ Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers

文件:35.76 Kbytes 页数:2 Pages

ADPOW

APT5017BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi

文件:60.2 Kbytes 页数:4 Pages

ADPOW

APT5017SLC

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS VI™ Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers

文件:35.76 Kbytes 页数:2 Pages

ADPOW

APT5017SVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. •

文件:63.68 Kbytes 页数:4 Pages

ADPOW

APT5017BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件:62.58 Kbytes 页数:4 Pages

ADPOW

APT5017BVFR

isc N-Channel MOSFET Transistor

文件:419.51 Kbytes 页数:2 Pages

ISC

无锡固电

APT5017BVR

isc N-Channel MOSFET Transistor

文件:419.16 Kbytes 页数:2 Pages

ISC

无锡固电

APT5017BVRG

POWER MOS V

文件:49.07 Kbytes 页数:4 Pages

ADPOW

APT5017BVFRG

FREDFETs

ROHS

Microchip

微芯科技

详细参数

  • 型号:

    APT5017

  • 制造商:

    ADPOW

  • 制造商全称:

    Advanced Power Technology

  • 功能描述:

    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

供应商型号品牌批号封装库存备注价格
ATP
05+
TO-247
600
原装进口
询价
APT
24+
8866
询价
APT
24+/25+
12
原装正品现货库存价优
询价
APT
2016+
TO247
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
MICROSEMI
23+
TO-247
8000
原装正品,假一罚十
询价
APT
22+
TO-3P
8200
原装现货库存.价格优势!!
询价
APT
23+
TO-3P
3000
专做原装正品,假一罚百!
询价
APT
25+23+
TO-247
55239
绝对原装正品现货,全新深圳原装进口现货
询价
Microsemi/美高森美
18+
TO-247
7837
全新原装现货,可出样品,可开增值税发票
询价
Microch
20+
NA
33560
原装优势主营型号-可开原型号增税票
询价
更多APT5017供应商 更新时间2025-12-24 17:02:00