ISOTOP Boost chopper MOSFET Power Module

Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Ap

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MICROSEMI

美高森美

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi

文件：110.84 Kbytes 页数：7 Pages

ADPOW

500V/Boost chopper/Si Mosfet modules

MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery ruggedKelvin source for easy driveLow stray inductanceOutstanding performance at high frequency operationDirect mounting to heatsink (isolated package)Internal thermistor for temperature monitoring (optional)Lo • Configuration: Boost chopper\n• VDSS (V): 500\n• RDSon (mR) typ: 100\n• Current (A) Tc=80C: 30\n• Silicon type: MOSFET \n• Package: SOT227;

Microchip

微芯科技

SOT-227

APT

晶科电子

上传：深圳市维众兴电子有限公司

TO-247

APT

晶科电子

上传：深圳市毅创腾电子科技有限公司