N-Channel Enhancement Mode MOSFET

Features • 30V/8A, RDS(ON) = 17mΩ(typ.) @ VGS = 10V RDS(ON) = 22mΩ(typ.) @ VGS = 4.5V • Super High Density Cell Design • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Po

文件：118.55 Kbytes 页数：10 Pages

ANPEC

茂达电子

OptiMOS Small-Signal-Transistor

文件：108.22 Kbytes 页数：8 Pages

Infineon

英飞凌

AC input 1 or 3-phase, 47 - 400 Hz

文件：219.43 Kbytes 页数：3 Pages

POWERBOX

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 30V , 7.9A , RDS(ON)=20mΩ @VGS=10V. RDS(ON)=30m @V Ω GS=4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：54.91 Kbytes 页数：5 Pages

CET

华瑞