OptiMOS Small-Signal-Transistor

文件：108.22 Kbytes 页数：8 Pages

Infineon

英飞凌

Low Voltage MOSFETs - OptiMOS Small Signal MOSFET, 30V, SO-8, RDSon = 20mOhm, 8A, LL, dual

Infineon

英飞凌

AC input 1 or 3-phase, 47 - 400 Hz

文件：219.43 Kbytes 页数：3 Pages

POWERBOX

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 30V , 7.9A , RDS(ON)=20mΩ @VGS=10V. RDS(ON)=30m @V Ω GS=4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：54.91 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 7.5 Ampere FEATURE * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. * Small flat package. (SO-8 ) APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：198.78 Kbytes 页数：2 Pages

CHENMKO

力勤