Dual N-Channel Enhancement Mode MOSFET

Features • 20V/8A , RDS(ON)=15mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered System

文件：560.43 Kbytes 页数：9 Pages

ANPEC

茂达电子

Dual N-Channel Enhancement Mode MOSFET

Anpec

茂达电子

Dual N-Channel Enhancement Mode MOSFET

Features • 20V/8A , RDS(ON)=15mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered System

文件：560.43 Kbytes 页数：9 Pages

ANPEC

茂达电子

Dual N-Channel Enhancement Mode MOSFET

Features • 20V/8A , RDS(ON)=15mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered System

文件：560.43 Kbytes 页数：9 Pages

ANPEC

茂达电子

Dual N-Channel 20-V (D-S) MOSFET

文件：986.12 Kbytes 页数：7 Pages

VBSEMI

微碧半导体