P-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET Features •-30V/-4.6A , RDS(ON)=52mΩ(typ.) @ VGS=-10V RDS(ON)=80mΩ(typ.) @ VGS=-4.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant) Applications •Power Management in Notebook Compute

文件：117.18 Kbytes 页数：10 Pages

ANPEC

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P-Channel 30-V (D-S) MOSFET

文件：961.47 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Features • -30V/-4.6A, RDS(ON) = 52mΩ(typ.) @ VGS= -10V RDS(ON) = 80mΩ(typ.) @ VGS= -4.5V • Super High Density Cell Design • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer, Port

文件：123.06 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel MOSFET uses advanced trench technology

文件：1.74842 Mbytes 页数：5 Pages

DOINGTER

杜因特

P-Channel MOSFET uses advanced trench technology

文件：1.2113 Mbytes 页数：4 Pages

DOINGTER

杜因特