APM9922KC-TRL

Dual N-Channel Enhancement Mode MOSFET

Features •20V/6A, RDS(ON)=28mW(typ.)@VGS=4.5V RDS(ON)=34mW(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

APM9922KC-TU

DualN-ChannelEnhancementModeMOSFET

Features •20V/6A, RDS(ON)=28mW(typ.)@VGS=4.5V RDS(ON)=34mW(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

APM9922KC-TUL

DualN-ChannelEnhancementModeMOSFET

Features •20V/6A, RDS(ON)=28mW(typ.)@VGS=4.5V RDS(ON)=34mW(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

DMBT9922

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •HighCurrentGain •ComplementtoDMBT9022

DMDT9922

PNPDUAL,MATCHEDPAIRSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •LowNoise •HighCurrentGain •MatchedPairofTransistors

FC9922

3-PinSwitch-ModeLEDLampDriverIC

GC9922

SchottkyBarrierDiodesTMForMixersandDetectors

DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre

GSS9922E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTC9922E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTS9922E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGTS9922Eprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. Features *Lowon-resistance *Capableof2.5Vgatedrive *OptimalDC/DCbatteryapplication *Surfacemountpackage