Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-6A , RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=38mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Sy

文件：116 Kbytes 页数：10 Pages

ANPEC

茂达电子

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-6A , RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=38mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Sy

文件：116 Kbytes 页数：10 Pages

ANPEC

茂达电子

Dual N-Channel Enhancement Mode Field Effect Transistor

文件：500.43 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

文件：108.19 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 6.0A, RDS(ON) = 36mW @VGS = 10V. RDS(ON) = 42mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RDS(ON) = 75mW @VGS = 2.5V. Lead free product is acquired.

文件：889.37 Kbytes 页数：4 Pages

CET-MOS

华瑞