APM9953KC-TRL

Dual P-Channel Enhancement Mode MOSFET

Features •-20V/-3A,RDS(ON)=76mΩ(typ.)@VGS=-10V RDS(ON)=93mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSyste

APM9953KC-TU

P-ChannelEnhancementModeMOSFET

Features •-20V/-3A,RDS(ON)=76mΩ(typ.)@VGS=-10V RDS(ON)=93mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSyste

APM9953KC-TU

DualP-ChannelEnhancementModeMOSFET

Features •-20V/-3A,RDS(ON)=76mΩ(typ.)@VGS=-10V RDS(ON)=93mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSyste

APM9953KC-TUL

DualP-ChannelEnhancementModeMOSFET

Features •-20V/-3A,RDS(ON)=76mΩ(typ.)@VGS=-10V RDS(ON)=93mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSyste

CEM9953A

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-3.5A,RDS(ON)=80mW@VGS=-10V. RDS(ON)=130mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEM9953A

DualP-ChannelEnhancementModeMOSFET

FEATURES ■-30V,-2.9A,RDS(ON)=100mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CHM9953AJPT

DualP-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT3.5Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi

FDS9953A

Dual30VP-ChannelPowerTrenchMOSFET

IRF9953

PowerMOSFET(Vdss=-30V,Rds(on)=0.25ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF9953PBF

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide