Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-3A ,RDS(ON)=76mΩ(typ.) @ VGS=-10V RDS(ON)=93mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Syste

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ANPEC

茂达电子

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

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CET

华瑞

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -3.5A, RDS(ON) = 80mW @VGS = -10V. RDS(ON) = 130mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

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CET-MOS

华瑞

Dual P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 3.5 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switchi

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CHENMKO

力勤