P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Features • -30V/-4.6A, RDS(ON) = 52mΩ(typ.) @ VGS= -10V RDS(ON) = 80mΩ(typ.) @ VGS= -4.5V • Super High Density Cell Design • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer, Port

文件：123.06 Kbytes 页数：9 Pages

ANPEC

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文件：1.74842 Mbytes 页数：5 Pages

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P-Channel MOSFET uses advanced trench technology

文件：1.2113 Mbytes 页数：4 Pages

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P-Channel Enhancement Mode Power MOSFET

文件：281.24 Kbytes 页数：6 Pages

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上海贝岭